IKP08N65H5_15 Datasheet, PDF (4/17 Pages) Infineon Technologies AG – 650V DuoPack IGBT and Diode High speed switching series fifth generation

IKP08N65H5
Highspeedswitchingseriesfifthgeneration
MaximumRatings
Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet.
Parameter
Symbol
Value
Unit
Collector-emitter voltage
VCE
DCcollectorcurrent,limitedbyTvjmax
TC=25°C
IC
TC=100°C
Pulsedcollectorcurrent,tplimitedbyTvjmax
ICpuls
TurnoffsafeoperatingareaVCE≤650V,Tvj≤175°C
-
Diodeforwardcurrent,limitedbyTvjmax
TC=25°C
IF
TC=100°C
Diodepulsedcurrent,tplimitedbyTvjmax
IFpuls
Gate-emitter voltage
TransientGate-emittervoltage(tp≤10µs,D<0.010)
VGE
PowerdissipationTC=25°C
PowerdissipationTC=100°C
Ptot
Operating junction temperature
Tvj
Storage temperature
Tstg
Soldering temperature,
wave soldering 1.6mm (0.063in.) from case for 10s
650
V
18.0
A
11.0
24.0
A
24.0
A
20.0
A
12.0
24.0
A
±20
±30
V
70.0
35.0
W
-40...+175
°C
-55...+150
°C
260
°C
Mounting torque, M3 screw
Maximum of mounting processes: 3
M
0.6
Nm
ThermalResistance
Parameter
Characteristic
IGBT thermal resistance,
junction - case
Diode thermal resistance,
junction - case
Thermal resistance
junction - ambient
Symbol Conditions
Rth(j-c)
Rth(j-c)
Rth(j-a)
Max.Value
Unit
2.20
K/W
2.90
K/W
62
K/W
4
Rev.2.1,2015-05-05