BFP720ESD Datasheet, PDF (9/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP720ESD
Product Brief
Table 2 Quick Reference AC Characteristics at T_A = 25°C
Parameter
Symbol
Values
Min. Typ. Max.
Transition frequency
f_T
–
43
–
V_CE = 3 V, f = 2.4 GHz
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
V_CE = 3 V, f = 5.5 GHz
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Low noise operation point
High linearity operation point
Minimum noise figure
Minimum noise figure
Associated gain
Linearity
1 dB gain compression point
3rd order intercept point
G_ms
–
G_ms
–
S₂₁
–
S₂₁
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
22.5 –
26
–
20
–
23
–
0.65 –
21.5 –
7.5
–
22.5 –
G_ms
–
G_ma
–
S₂₁
–
S₂₁
–
NF_min
–
G_ass
–
OP_1dB
–
OIP₃
–
20
–
19.5 –
14.5 –
16
–
0.9
–
14.5 –
8
–
22
–
Unit Note / Test Condition
GHz V_CE = 3 V, I_C = 15mA
f = 1 GHz
dB
dB
dB
dBm
I_C = 5 mA
I_C = 15 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 15 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
dB
dB
dB
dBm
I_C = 5 mA
I_C = 15 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 15 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Data Sheet
9
Revision 1.0, 2010-06-29