|
BFP720ESD Datasheet, PDF (13/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor | |||
|
◁ |
BFP720ESD
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias Tâs in a 50 Ω system, TA = 25 °C
Electrical Characteristics
Top View
E
C
VC
Bias -T
OUT
VB
B
E
Bias-T
(Pin 1)
IN
Figure 2 BFP720ESD Testing Circuit
Table 7 AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
34.5 â
38.5 â
23.5 â
30.5 â
0.55 â
30.5 â
6.5
â
21.5 â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Data Sheet
13
Revision 1.0, 2010-06-29
|
▷ |