BFP720ESD Datasheet, PDF (17/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP720ESD
Electrical Characteristics
Table 14 AC Characteristics, V_CE = 3 V, f = 5.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ma
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
20
–
19.5 –
14.5 –
16
–
0.9
–
14.5 –
8
–
22
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 15 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 15 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Table 15 AC Characteristics, V_CE = 3 V, f = 10 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
G_ms
–
G_ms
–
Low noise operation point
High linearity operation point
Minimum noise figure
S₂₁
–
S₂₁
–
Minimum noise figure
Associated gain
Linearity
NF_min
–
G_ass
–
1 dB gain compression point
3rd order intercept point
OP_1dB
–
OIP₃
–
Values
Typ. Max.
15.5 –
15.5 –
7.5
–
9.5
–
1.55 –
11
–
5.5
–
20
–
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 15 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 15 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 15 mA
I_C = 15 mA
Note:
1. G_ms = IS₂₁ / S₁₂I for k < 1; G_ma = IS₂₁ / S₁₂I(k-(k²-1)^1/2) for k > 1
2. In order to get the NF_min values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3. OIP3₃ value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
17
Revision 1.0, 2010-06-29