|
BFP720ESD Datasheet, PDF (16/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor | |||
|
◁ |
BFP720ESD
Electrical Characteristics
Table 12 AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
22.5 â
26
â
20
â
23
â
0.65 â
21.5 â
7.5
â
22.5 â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Table 13 AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Min.
Maximum power gain
Low noise operation point
High linearity operation point
Transducer gain
Gms
â
Gms
â
Low noise operation point
High linearity operation point
Minimum noise figure
S21
â
S21
â
Minimum noise figure
Associated gain
Linearity
NFmin
â
Gass
â
1 dB gain compression point
3rd order intercept point
OP1dB
â
OIP3
â
Values
Typ. Max.
21.5 â
24
â
18
â
20
â
0.75 â
18.5 â
7.5
â
22.5 â
Unit Note / Test Condition
dB
dB
dB
dBm
IC = 5 mA
IC = 15 mA
ZS = ZL = 50 Ω
IC = 5 mA
IC = 15 mA
ZS = Zopt
IC = 5 mA
IC = 5 mA
ZS = ZL = 50 Ω
IC = 15 mA
IC = 15 mA
Data Sheet
16
Revision 1.0, 2010-06-29
|
▷ |