BFP720ESD Datasheet, PDF (26/29 Pages) Infineon Technologies AG – Robust High Performance Low Noise Bipolar RF Transistor

BFP720ESD
Electrical Characteristics
Figure 18
3.4
3.2
3
2.8
2.6
2.4
f = 10GHz
f = 5.5GHz
2.2
f = 2.4GHz
2
f = 1.9GHz
1.8
f = 0.9GHz
f = 0.45GHz
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0
5
10
15
20
25
I_c [mA]
Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz
5
4.5
4
f = 10GHz
3.5
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
3
f = 0.9GHz
f = 0.45GHz
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
I_c [mA]
Figure 19 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. T_A = 25 °C
Data Sheet
26
Revision 1.0, 2010-06-29