BFP720 Datasheet, PDF (9/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720
Product Brief
Table 2 Quick Reference AC Characteristics at T_A = 25°C
Parameter
Symbol
Values
Min. Typ. Max.
Transition frequency
f = 2.4 GHz
f_T
–
45
–
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
Linearity
1 dB Gain Compression Point
3^rd Order Intercept Point
f = 5.5 GHz
–
G_ms
G_ms
–
S₂₁
S₂₁
–
NF_min
G_ass
–
OP_1dB
OIP₃
–
22
25
–
20.5
23
–
0.5
21.5
–
6
22
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
Linearity
1 dB Gain Compression Point
3^rd Order Intercept Point
–
G_ms
G_ma
–
S₂₁
S₂₁
–
NF_min
G_ass
–
OP_1dB
OIP₃
–
19
19.5
–
15
16
–
0.7
15
–
8.5
23
Unit Note / Test Condition
GHz V_CE = 3 V, I_C = 13 mA
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Data Sheet
9
Revision 1.0, 2009-01-20