BFP720 Datasheet, PDF (10/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

3
Maximum Ratings
BFP720
Maximum Ratings
Table 3 Maximum Ratings (T_A = 25 °C unless otherwise specified)
Parameter
Symbol
Values
Min.
Typ.
Max.
Collector-emitter voltage
V_CEO
–
–
4.0
T_A = -55 °C
3.5
Collector-emitter voltage
V_CES
–
–
13
Collector-base voltage
V_CBO
–
–
13
Emitter-base voltage
V_EBO
–
–
1.2
Collector current
I_C
–
–
25
Base current
I_B
–
–
2
Total power dissipation¹⁾
P_tot
–
–
100
T_S ≤ 108 °C
Operation junction temperature T_JOp
-55
–
150
Storage temperature
T_Stg
-55
–
150
1) T_S measured on the emitter lead at the soldering point of the pcb
Unit Note / Test Condition
V
–
V
–
V
–
V
–
mA –
mA –
mW –
°C –
°C –
Note: Exceeding only one of the above maximum rating limits even for a short moment may cause permanent
damage to the device. Even if the device continues to operate, its lifetime may be considerably shortened.
Maximum ratings are stress ratings only and do not mean unaffected functional operation and lifetime at
others than standard operation conditions.
Data Sheet
10
Revision 1.0, 2009-01-20