BFP720 Datasheet, PDF (16/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720
Electrical Characteristics
Table 10 AC Characteristics, V_CE = 3 V, f = 1500 MHz
Parameter
Symbol
Values
Min. Typ. Max.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
Linearity
1 dB Gain Compression Point
3^rd Order Intercept Point
–
G_ms
G_ms
–
S₂₁
S₂₁
–
NF_min
G_ass
–
OP_1dB
OIP₃
–
24
27.5
–
22
25.5
–
0.45
24
–
6
21.5
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Table 11 AC Characteristics, V_CE = 3 V, f = 1.9 GHz
Parameter
Symbol
Min.
Maximum Power Gain
Low Noise Operation Point
High Linearity Operation Point
Transducer Gain
Low Noise Operation Point
High Linearity Operation Point
Minimum Noise Figure
Minimum Noise Figure
Associated Gain
Linearity
1 dB Gain Compression Point
3^rd Order Intercept Point
–
G_ms
G_ms
–
S₂₁
S₂₁
–
NF_min
G_ass
–
OP_1dB
OIP₃
Values
Typ. Max.
–
23
26
–
21.5
24.5
–
0.45
23
–
7
22
Unit Note / Test Condition
dB
dB
dB
dBm
I_C = 5 mA
I_C = 13 mA
Z_S = Z_L = 50 Ω
I_C = 5 mA
I_C = 13 mA
Z_S = Z_opt
I_C = 5 mA
I_C = 5 mA
Z_S = Z_L = 50 Ω
I_C = 13 mA
I_C = 13 mA
Data Sheet
16
Revision 1.0, 2009-01-20