BFP720 Datasheet, PDF (8/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

BFP720
Product Brief
2
Product Brief
The BFP720 is a wideband Silicon Germanium Carbon (SiGe:C) NPN Heterojunction Bipolar Transistor (HBT) in
a plastic 4-pin dual emitter SOT343 package. The device combines very high gain with lowest noise figure at low
operating current for use in a wide range of wireless applications. The BFP720 is especially well-suited for portable
battery-powered applications in which reduced power consumption is a key requirement. Collector design
supports operation voltages from 1.0 V to 4.0 V.
Table 1 Quick Reference DC Characteristics at T_A = 25°C
Parameter
Symbol
Values
Min. Typ. Max.
Collector-emitter breakdown voltage V_(BR)CEO 4
4.7
–
Collector-base breakdown voltage
V_(BR)CBO 13
15
–
Collector current
I_C
–
–
25
Total power dissipation
P_tot
–
–
100
DC current gain
h_FE
160 250 400
Unit Note / Test Condition
V
I_C = 1 mA, I_B = 0 mA
V
I_E = 0 mA
mA
mW T_S ≤ 108 °C
V_CE = 3 V, I_C = 13 mA
Data Sheet
8
Revision 1.0, 2009-01-20