BFP720 Datasheet, PDF (7/26 Pages) Infineon Technologies AG – C Heterojunction Wideband RF Bipolar Transistor

SiGe:C Heterojunction Wideband RF Bipolar Transistor
BFP720
1
Features
Main features:
• High performance general purpose wideband LNA transistor
• 150 GHz f_T-Silicon Germanium Carbon technology
3
• Enables Best-In-Class performance for wireless applications due to
high dynamic range
4
2
1
• Transistor geometry optimized for low-current applications
• Operation voltage: 1.0 V to 4.0 V
• Very high gain at high frequencies and low current consumption
• 26 dB maximum stable gain at 1.9 GHz and only 13 mA
• 15 dB maximum available gain at 10 GHz and only 13 mA
• Ultra low noise figure from latest SiGe:C technology
• 0.7 dB minimum noise figure at 5.5 GHz and 0.95 dB at 10 GHz
• High linearity OP1dB = +8.5 dBm and OIP3 = +23 dBm at 5.5 GHz and low current consumption of 13 mA
• Pb-free (RoHS compliant) package
Application
FM Radio, Mobile TV, RKE, AMR, Cellular, ZigBee, GPS, WiMAX, SDARs, Bluetooth, WiFi, Cordless phone,
UMTS, WLAN, UWB, LNB
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP720
SOT343
Data Sheet
1=B
Pin Configuration
2=E
3=C
7
4=E
Marking
R9s
Revision 1.0, 2009-01-20