SPP17N80C3_07 Datasheet, PDF (8/13 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3
SPA17N80C3
13 Forward characteristics of body diode
I_F = f (V_SD)
parameter: T_j , tp = 10 µs
10 ^{2 SPP17N80C3}
A
10 ¹
14 Avalanche SOA
I_AR = f (t_AR)
par.: T_j ≤ 150 °C
18
A
14
12
10
10 ⁰
10 ^-1
0
T_j = 25 °C typ
T_j = 150 °C typ
T_j = 25 °C (98%)
T_j = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
V_SD
8
6
T j(START)=25°C
4
2
T j(START)=125°C
0
10
-3
10 ^-2
10 ^-1
10 ⁰
10 ¹
10 ²
µs ^{10 4}
t_AR
15 Avalanche energy
E_AS = f (T_j)
par.: I_D = 3.4 A, V_DD = 50 V
700
mJ
16 Drain-source breakdown voltage
V_(BR)DSS = f (T_j)
980 ^SPP17N80C3
V
600
550
500
450
400
350
300
250
200
150
100
50
0
25
50
Rev. 2.6
75
100
°C
150
T_j
940
920
900
880
860
840
820
800
780
760
740
720
-60 -20
20
60 100 °C
180
T_j
Page 8
2007-08-30