SPP17N80C3_07 Datasheet, PDF (1/13 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3
SPA17N80C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R_DS(on) in TO 220
• Ultra low gate charge
V_DS
R_DS(on)
I_D
800 V
0.29 Ω
17 A
PG-TO220-3-31 PG-TO220
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
23
1
P-TO220-3-31
• Improved transconductance
• PG-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type
SPP17N80C3
SPA17N80C3
Package
Ordering Code
PG-TO220 Q67040-S4353
PG-TO220-3-31 SP000216353
Marking
17N80C3
17N80C3
Maximum Ratings
Parameter
Symbol
Continuous drain current
T_C = 25 °C
T_C = 100 °C
Pulsed drain current, t_p limited by T_jmax
Avalanche energy, single pulse
I_D=3.4A, V_DD=50V
Avalanche energy, repetitive t_AR limited by T_jmax²⁾
I_D=17A, V_DD=50V
Avalanche current, repetitive t_AR limited by T_jmax
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation, T_C = 25°C
Operating and storage temperature
I_D
I_{D puls}
E_AS
E_AR
I_AR
V_GS
V_GS
P_tot
T_j , T_stg
Value
SPP
SPA
17
17¹⁾
11
11¹⁾
51
51
670
670
Unit
A
A
mJ
0.5
0.5
17
17 A
±20
±20 V
±30
±30
208
42 W
-55...+150
°C
Rev. 2.6
Page 1
2007-08-30