SPP17N80C3_07 Datasheet, PDF (2/13 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3
SPA17N80C3
Maximum Ratings
Parameter
Drain Source voltage slope
V_DS = 640 V, I_D = 17 A, T_j = 125 °C
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ³⁾
Soldering temperature, wavesoldering
1.6 mm (0.063 in.) from case for 10s ⁴⁾
Symbol
dv/dt
Value
50
Unit
V/ns
Symbol
R_thJC
R_{thJC_FP}
R_thJA
R_{thJA_FP}
R_thJA
T_sold
Values
Unit
min. typ. max.
-
-
0.6 K/W
-
-
3.6
-
-
62
-
-
80
-
-
62
-
35
-
-
- 260 °C
Electrical Characteristics, at T_j=25°C unless otherwise specified
Parameter
Symbol Conditions
Values
Unit
min. typ. max.
Drain-source breakdown voltage ^V_(BR)DSS ^V_GS^{=0V, I}_D^{=0.25mA 800}
-
Drain-Source avalanche
V_(BR)DS ^V_GS^{=0V, I}_D^=17A
- 870
breakdown voltage
-V
-
Gate threshold voltage
V_GS(th) ^I_D^{=1000µA, V}_GS=VDS ^2.1
3
3.9
Zero gate voltage drain current I_DSS
V_DS=800V, V_GS=0V,
µA
T_j=25°C
-
0.5 25
T_j=150°C
-
- 250
Gate-source leakage current
I_GSS
Drain-source on-state resistance R_DS(on)
V_GS=20V, V_DS=0V
V_GS=10V, I_D=11A
T_j=25°C
T_j=150°C
-
- 100 nA
Ω
- 0.25 0.29
- 0.78 -
Gate input resistance
R_G
f=1MHz, open drain
-
0.7
-
Rev. 2.6
Page 2
2007-08-30