SPP17N80C3_07 Datasheet, PDF (7/13 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge

SPP17N80C3
SPA17N80C3
9 Typ. drain-source on resistance
R_DS(on)=f(I_D)
parameter: T_j=150°C, V_GS
1.5
Ω
10 Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = 11 A, V_GS = 10 V
SPP17N80C3
1.6
Ω
1.3
1.2
1.2
1.1 ^{4V 4.5V 5V}
5.5V _6V
6.5V
1
1
0.8
0.9
0.6
0.8
7V
8V
0.4
98%
0.7
10V
20V
typ
0.2
0.6
0.5
0
5 10 15 20 25 _A
35
I_D
0
-60
-20
20
60 100 °C
180
T_j
11 Typ. transfer characteristics
I_D= f ( V_GS ); V_DS≥ 2 x I_D x R_DS(on)max
parameter: t_p = 10 µs
65
A
25°C
55
50
45
40
35
150°C
30
25
20
15
10
5
0
0 2 4 6 8 10 12 14 16 _V 20
V_GS
12 Typ. gate charge
V_GS = f (Q_Gate)
parameter: I_D = 17 A pulsed
SPP17N80C3
16
V
12
0,2 V_{DS max}
10
0,8 V_{DS max}
8
6
4
2
0
0 20 40 60 80 100 120 _nC 160
Q_Gate
Rev. 2.6
Page 7
2007-08-30