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SPP17N80C3_07 Datasheet, PDF (6/13 Pages) Infineon Technologies AG – New revolutionary high voltage technology Worldwide best RDS(on) in TO 220 Ultra low gate charge
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5 Transient thermal impedance
ZthJC = f (tp)
parameter: D = tp/T
10 1
K/W
10 0
SPP17N80C3
SPA17N80C3
6 Transient thermal impedance FullPAK
ZthJC = f (tp)
parameter: D = tp/t
10 1
K/W
10 0
10 -1
10 -1
D = 0.5
10 -2
D = 0.5
10 -2
D = 0.2
D = 0.2
D = 0.1
D = 0.1
D = 0.05
D = 0.05
D = 0.02
10 -3
D = 0.02
D = 0.01
10 -3
D = 0.01
single pulse
single pulse
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
s 10 -1
tp
10
-4
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
10 -1
s 10 1
tp
7 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 10 µs, VGS
70
A
20V
60
10V
55
50
45
8V
40
35
7V
30
25
6V
20
15
10
5V
5
0
0
5
10
15
20 VDS 30
V
8 Typ. output characteristic
ID = f (VDS); Tj=150°C
parameter: tp = 10 µs, VGS
35
20V
A
10V
8V
7V
25
6.5V
6V
20
5.5V
15
5V
10
4.5V
5
4V
0
0
5
10
15
20 VDS 30
V
Rev. 2.6
Page 6
2007-08-30
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