 English |
|
|
|
|
|
|
|
| SGP30N60HS_09 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation | |||
| |||
| ◁ |
SGP30N60HS
SGW30N60HS
15V
1nF
Ciss
120V
480V
10V
Coss
100pF
Crss
5V
0V
0nC
50nC
100nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=30 A)
150nC
10pF
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
15µs
10µs
5µs
0µs
10V
11V
12V
13V
14V
VGE, GATE-EMITETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
300A
250A
200A
150A
100A
50A
0A
10V 12V 14V 16V 18V
VGE, GATE-EMITETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE ⤠600V, Tj ⤠150°C)
Power Semiconductors
8
Rev. 2.4 Nov 09
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese