SGP30N60HS_09 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
SGP30N60HS
SGW30N60HS
Symbol
Conditions
R_thJC
R_thJA
PG-TO-220-3-1
PG-TO-247-3-21
Max. Value
Unit
0.5
K/W
62
40
Electrical Characteristic, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
V_(BR)CES
V_CE(sat)
V_GE(th)
I_CES
I_GES
g_fs
V_GE=0V, I_C=500µA
V_GE = 15V, I_C=30A
T_j=25°C
T_j=150°C
I_C=700µA,V_CE=V_GE
V_CE=600V,V_GE=0V
T_j=25°C
T_j=150°C
V_CE=0V,V_GE=20V
V_CE=20V, I_C=30A
min.
600
3
-
-
-
-
Value
Typ.
-
2.8
3.5
4
-
-
-
20
Unit
max.
-V
3.15
4.00
5
µA
40
3000
100 nA
-S
Dynamic Characteristic
Input capacitance
C_iss
V_CE=25V,
-
1500
pF
Output capacitance
C_oss
V_GE=0V,
-
150
Reverse transfer capacitance
C_rss
f=1MHz
-
92
Gate charge
Q_Gate
V_CC=480V, I_C=30A
-
141
nC
V_GE=15V
Internal emitter inductance
L_E
PG-TO-220-3-1
-
7
nH
measured 5mm (0.197 in.) from case
PG-TO-247-3-21
13
Short circuit collector current¹⁾
I_C(SC)
V_GE=15V,t_SC≤10µs
-
220
A
V_CC ≤ 600V,
T_j ≤ 150°C
1) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
2
Rev. 2.4 Nov 09