SGP30N60HS_09 Datasheet, PDF (3/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGP30N60HS
SGW30N60HS
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G=11Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
20
21
250
25
0.60
0.55
1.15
Unit
max.
ns
mJ
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G= 1.8Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
T_j=150°C
V_CC=400V,I_C=30A,
V_GE=0/15V,
R_G= 11Ω
L_σ¹⁾ =60nH,
C_σ¹⁾ =40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
16
13
122
29
0.78
0.48
1.26
20
19
274
27
0.91
0.70
1.61
Unit
max.
ns
mJ
ns
mJ
1) _{Leakage inductance Lσ an d Stray capacity C σ due to test circuit in Figure E.}
Power Semiconductors
3
Rev. 2.4 Nov 09