SGP30N60HS_09 Datasheet, PDF (6/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGP30N60HS
SGW30N60HS
t_d(off)
100ns
t_f
t_d(on)
10ns
0A
t_r
10A 20A 30A 40A 50A
I_C, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, R_G=11Ω,
Dynamic test circuit in Figure E)
t_d(off)
100 ns
t_f
t_d(on)
10 ns ^tr
0Ω
5Ω
10Ω 15Ω 20Ω 25Ω
R_G, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, T_J=150°C,
V_CE=400V, V_GE=0/15V, I_C=30A,
Dynamic test circuit in Figure E)
t_d(off)
100ns
t_f
t_r
t_d(on)
10ns
0°C
50°C
100°C
150°C
T_J, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, V_CE=400V,
V_GE=0/15V, I_C=30A, R_G=11Ω,
Dynamic test circuit in Figure E)
5,5V
5,0V
4,5V
4,0V
3,5V
3,0V
max.
2,5V
typ.
2,0V
1,5V
min.
1,0V
-50°C
0°C
50°C 100°C 150°C
T_J, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(I_C = 0.7mA)
Power Semiconductors
6
Rev. 2.4 Nov 09