SGP30N60HS_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – High Speed IGBT in NPT-technology 30% lower Eoff compared to previous generation

SGP30N60HS
SGW30N60HS
High Speed IGBT in NPT-technology
• 30% lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for operation above 30 kHz
• NPT-Technology for 600V applications offers:
- parallel switching capability
- moderate E_off increase with temperature
- very tight parameter distribution
PG-TO-220-3-1
• High ruggedness, temperature stable behaviour
• Pb-free lead plating; RoHS compliant
• Qualified according to JEDEC¹ for target applications
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SGP30N60HS
V_CE
600V
I_C
E_off)
T_j
Marking
Package
30 480µJ 150°C G30N60HS PG-TO-220-3-1
SGW30N60HS
600V 30 480µJ 150°C G30N60HS PG-TO-247-3
Maximum Ratings
Parameter
Symbol
Value
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 600V, T_j ≤ 150°C
Avalanche energy single pulse
I_C = 20A, V_CC=50V, R_GE=25Ω
start T_J=25°C
Gate-emitter voltage static
transient (t_p<1µs, D<0.05)
Short circuit withstand time²⁾
V_GE = 15V, V_CC ≤ 600V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Time limited operating junction temperature for t < 150h
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
V_CE
I_C
I_Cpuls
-
E_AS
V_GE
t_SC
P_tot
T_j ,
T_stg
T_j(tl)
-
600
41
30
112
112
165
±20
±30
10
250
-55...+150
175
260
Unit
V
A
mJ
V
µs
W
°C
1 _{J-STD-020 and JESD-022}
2) _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.4 Nov 09