SGP15N120_09 Datasheet, PDF (8/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP15N120
SGW15N120
20V
15V
C_iss
1nF
U_CE=960V
10V
5V
0V
0nC
50nC 100nC 150nC
Q_GE, GATE CHARGE
Figure 17. Typical gate charge
(I_C = 15A)
100pF
C_oss
C_rss
0V
10V
20V
30V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(V_GE = 0V, f = 1MHz)
30µs
20µs
10µs
0µs
10V 11V 12V 13V 14V 15V
V_GE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(V_CE = 1200V, start at T_j = 25°C)
300A
250A
200A
150A
100A
50A
0A
10V 12V 14V 16V 18V 20V
V_GE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V≤V_CE ≤1200V, T_C = 25°C, T_j ≤ 150°C)
Power Semiconductors
8
Rev. 2.6 Nov. 09