SGP15N120_09 Datasheet, PDF (1/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP15N120
SGW15N120
Fast IGBT in NPT-technology
• 40% lower E_off compared to previous generation
• Short circuit withstand time – 10 µs
• Designed for:
- Motor controls
- Inverter
- SMPS
• NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
PG-TO-220-3-1
• Qualified according to JEDEC¹ for target applications
• Pb-free lead plating; RoHS compliant
• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3
Type
SGP15N120
SGW15N120
V_CE
I_C
1200V 15A
1200V 15A
E_off
1.5mJ
1.5mJ
T_j
150°C
150°C
Marking Package
GP15N120 PG-TO-220-3-1
SGW15N120 PG-TO-247-3
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
T_C = 25°C
T_C = 100°C
Pulsed collector current, t_p limited by T_jmax
Turn off safe operating area
V_CE ≤ 1200V, T_j ≤ 150°C
Gate-emitter voltage
Avalanche energy, single pulse
I_C = 15A, V_CC = 50V, R_GE = 25Ω, start at T_j = 25°C
Short circuit withstand time²
V_GE = 15V, 100V≤ V_CC ≤1200V, T_j ≤ 150°C
Power dissipation
T_C = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Symbol
V_CE
I_C
I_Cpuls
-
V_GE
E_AS
t_SC
P_tot
T_j , T_stg
-
Value
Unit
1200
V
A
30
15
52
52
±20
V
85
mJ
10
µs
198
W
-55...+150
°C
260
1 _{J-STD-020 and JESD-022}
2 _{Allowed number of short circuits: <1000; time between short circuits: >1s.}
Power Semiconductors
1
Rev. 2.6 Nov. 09