SGP15N120_09 Datasheet, PDF (7/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP15N120
SGW15N120
14mJ
12mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
10mJ
8mJ
E_on*
6mJ
4mJ
E_off
2mJ
0mJ
0A
10A 20A 30A 40A 50A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 33 Ω,
dynamic test circuit in Fig.E )
5mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
4mJ
3mJ
2mJ
1mJ
E_on*
E_off
0mJ
0Ω
25Ω
50Ω
75Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 15A,
dynamic test circuit in Fig.E )
4mJ
*) Eon and Ets include losses
due to diode recovery.
3mJ
2mJ
1mJ
E*
ts
E_on*
E_off
0mJ
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 15A, R_G = 3 3Ω,
dynamic test circuit in Fig.E )
D=0.5
0.2
10^-1K/W _0.1
0.05
0.02
10^-2K/W _0.01
R,(K/W)
0.09751
0.29508
0.13241
0.10485
τ, (s)
0.67774
0.11191
0.00656
0.00069
R1
R2
10^-3K/W
single pulse
C1=τ1/R1 C2=τ2/R2
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
Power Semiconductors
7
Rev. 2.6 Nov. 09