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| SGP15N120_09 Datasheet, PDF (2/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation | |||
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Thermal resistance,
junction â ambient
Symbol
RthJC
RthJA
Conditions
PG-TO-220-3-1
PG-TO-247-3
SGP15N120
SGW15N120
Max. Value
Unit
0.63
K/W
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
V(BR)CES
VCE(sat)
VGE(th)
VGE=0V,
IC=1000µA
VGE = 15V, IC=15A
Tj=25°C
Tj=150°C
IC=600µA,VCE=VGE
Zero gate voltage collector current I C ES
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
IGES
gfs
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=15A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=15A
VGE=15V
PG-TO-220-3-1
PG-TO-247-3
VGE=15V,tSCâ¤5µs
100Vâ¤VCCâ¤1200V,
Tj ⤠150°C
min.
1200
2.5
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
4
-
-
-
11
1250
100
65
130
7
13
145
Unit
max.
-V
3.6
4.3
5
µA
200
800
100 nA
-S
1500 pF
120
80
175 nC
- nH
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2.6 Nov. 09
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