SGP15N120_09 Datasheet, PDF (5/12 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology 40% lower Eoff compared to previous generation

SGP15N120
SGW15N120
50A
50A
40A
V_GE=17V
15V
30A
13V
11V
20A
9V
7V
10A
40A
30A
V_GE=17V
15V
13V
11V
20A
9V
7V
10A
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
50A
40A
30A
T_J=+150°C
20A
T_J=+25°C
T_J=-40°C
10A
0A
3V
5V
7V
9V
11V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 20V)
6V
5V
I_C=30A
4V
I_C=15A
3V
I_C=7.5A
2V
1V
0V
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
Power Semiconductors
5
Rev. 2.6 Nov. 09