 English |
|
|
|
|
|
|
|
| SGP07N120 Datasheet, PDF (8/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
| |||
| ◁ |
SGP07N120
SGB07N120
20V
15V
1nF
Ciss
10V
UCE=960V
5V
0V
0nC 20nC 40nC 60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 8A)
80nC
100pF
Coss
Crss
0V
10V
20V
30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
30µs
150A
25µs
20µs
100A
15µs
10µs
50A
5µs
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V ⤠VCE ⤠1200V, TC = 25°C, Tj ⤠150°C)
Power Semiconductors
8
Jul-02
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese