SGP07N120 Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP07N120
SGB07N120
25A
25A
20A
V_GE=17V
15A
15V
13V
11V
9V
10A
7V
20A
V_GE=17V
15V
15A
13V
11V
9V
10A
7V
5A
5A
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(T_j = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
V_CE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(T_j = 150°C)
25A
20A
15A
T_J=+150°C
T_J=+25°C
10A T_J=-40°C
5A
0A
3V
5V
7V
9V
11V
V_GE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(V_CE = 20V)
6V
I_C=16A
5V
4V
I_C=8A
3V
I_C=4A
2V
1V
0V
-50°C 0°C
50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(V_GE = 15V)
Power Semiconductors
5
Jul-02