SGP07N120 Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP07N120
SGB07N120
5mJ
*) Eon and Ets include losses
due to diode recovery.
4mJ
3mJ
2mJ
E_ts*
E_on*
E
off
1mJ
0mJ
0A
5A
10A 15A 20A
I_C, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, R_G = 4 7 Ω,
dynamic test circuit in Fig.E )
2.5mJ
*) Eon and Ets include losses
due to diode recovery.
E*
ts
2.0mJ
1.5mJ
1.0mJ
E_on*
E_off
0.5mJ
0.0mJ
0Ω 20Ω 40Ω 60Ω 80Ω 100Ω
R_G, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, T_j = 150°C,
V_CE = 800V, V_GE = +15V/0V, I_C = 8A,
dynamic test circuit in Fig.E )
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
E_ts*
1.5mJ
E_on*
1.0mJ
E_off
0.5mJ
0.0mJ
-50°C 0°C 50°C 100°C 150°C
T_j, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, V_CE = 800V,
V_GE = +15V/0V, I_C = 8A, R_G = 4 7Ω,
dynamic test circuit in Fig.E )
10⁰K/W
D=0.5
0.2
0.1
10^-1K/W
0.05
0.02
0.01
10^-2K/W
R,(K/W)
0.1020
0.40493
0.26391
0.22904
τ, (s)=
0.77957
0.21098
0.01247
0.00092
R1
R2
single pulse _{C1=τ1/ R1 C2=τ2/R2}
10^-3K/W
1µs 10µs 100µs 1ms 10ms 100ms 1s
t_p, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = t_p / T)
Power Semiconductors
7
Jul-02