SGP07N120 Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology

SGP07N120
SGB07N120
Switching Characteristic, Inductive Load, at T_j=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=25°C,
V_CC=800V,I_C=8A,
V_GE=15V/0V,
R_G=47Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
27
29
440
21
0.6
0.4
1.0
Unit
max.
35 ns
38
570
27
0.8 mJ
0.55
1.35
Switching Characteristic, Inductive Load, at T_j=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_ts
T_j=150°C
V_CC=800V,
I_C=8A,
V_GE=15V/0V,
R_G=47Ω,
L_σ¹⁾=180nH,
C_σ¹⁾=40pF
Energy losses include
“tail” and diode
reverse recovery.
min.
-
-
-
-
-
-
-
Value
typ.
30
26
490
30
1.0
0.7
1.7
Unit
max.
36 ns
31
590
36
1.2 mJ
0.9
2.1
1) _{Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.}
Power Semiconductors
3
Jul-02