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| SGP07N120 Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Fast IGBT in NPT-technology | |||
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SGP07N120
SGB07N120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction â case
Thermal resistance,
junction â ambient
SMD version, device on PCB1)
Symbol
Conditions
RthJC
RthJA
RthJA
TO-220AB
TO-263AB(D2PAK)
Max. Value
Unit
1
K/W
62
40
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V(BR)CES
VCE(sat)
VGE=0V, IC=500µA
VGE = 15V, IC=8A
Tj=25°C
Tj=150°C
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
VGE(th)
ICES
IGES
gfs
IC=350µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=8A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=8A
VGE=15V
TO-220AB
VGE=15V,tSCâ¤10µs
100Vâ¤VCCâ¤1200V,
Tj ⤠150°C
min.
1200
2.5
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
4
-
-
-
6
720
60
40
70
7
75
Unit
max.
-V
3.6
4.3
5
µA
100
400
100 nA
-S
870 pF
75
50
90 nC
- nH
-A
1) Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70µm thick) copper area for
collector connection. PCB is vertical without blown air.
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Jul-02
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