PTFB193404F Datasheet, PDF (8/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz

PTFB193404F
Confidential, Limited Internal Distribution
Reference Circuit
R803
10 Ohm
C804
10000000 pF
R801
100 Ohm
S1
2
1
3
C802
10000000 pF
S3
87
1
6
R802
1300 Ohm
2
5
34
C2
R804
1200 Ohm
S2 ⁴
1
S
B
E 3 _C801
1000000 pF
C803
1000 pF
TL102
TL101 2
3
1
TL117
TL116
TL122 ²
1
3
TL118
C102
1000000 pF
TL119
L101
22 nH
TL103
4
C104
10000000 pF
C107
1.5 pF
RF^P1_^OI^RN^T
TL110
TL121
3
1
2
TL120
TL109
TL108
C103
10000000 pF
εr = 3.48
H = 20 mil
RO/RO4350B1
TL123 TL124
TL111
3
1
2
C101
1000000 pF TL112
L102
22 nH TL113
R103
10 Ohm
C106
18 pF
C105
18 pF
R104
10 Ohm
TL104
TL107
TL106
TL114
TL105
Gate DUT
(Pin G1)
TL115
Gate DUT
(Pin G2)
Reference circuit input schematic for ƒ = 1990 MHz
Data Sheet – DRAFT ONLY
8 of 13 one
Rev. 04, 2011-02-07