PTFB193404F Datasheet, PDF (1/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz

PTFB193404F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
340 W, 30 V, 1930 – 1990 MHz
Description
The PTFB193404F is a 340-watt LDMOS FET intended for use in multi-
standard cellular power amplifier applications in the 1930 to 1990 MHz
frequency band. Features include input and output matching, high gain
and thermally-enhanced package with earless flange. Manufactured
with Infineon’s advanced LDMOS process, this device provides excellent
thermal performance and superior reliability.
PTFB193404F
Package H-37275-6/2
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-20
40
-25
Efficiency
35
-30
30
-35
25
-40
IMD Low
20
-45
15
ACPR
-50
10
-55
IMD Up
5
-60
0
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Features
• Broadband internal matching
• Wide video bandwidth
• Typical single-carrier WCDMA performance,
1990 MHz, 30 V
- Output power = 125 W
- Efficiency = 31%
- Gain = 17 dB
- PAR = 5.5 dB @ 0.01% CCDF
- ACPR @ 5 MHz = –35 dBc
• Increased negative gate-source voltage range
for improved performance in Doherty amplifiers
• Capable of handling 10:1 VSWR @ 30 V, 340 W
(CW) output power
• Integrated ESD protection
• Excellent thermal stability
• Pb-free and RoHS compliant
RF Characteristics
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 2.6 A, P_OUT = 80 W average, ƒ = 1990 MHz, 5 MHz spacing, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Adjacent Channel Power Ratio
G_ps
17.5
19
—
dB
η_D
28.5
30
—
%
ACPR
—
–31
–29
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet – DRAFT ONLY
1 of 13
Rev. 04, 2011-02-07