PTFB193404F Datasheet, PDF (3/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz

PTFB193404F
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFB193404F V1
PTFB193404F V1 R250
Package Outline
H-37275-6/2
H-37275-6/2
Package Description
Ceramic open-cavity, earless push-pull
Ceramic open-cavity, earless push-pull
Typical Performance (data taken in production test fixture)
Shipping
Tray
Tape & reel, 250 pcs
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A,
3GPP WCDMA, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
-25
-30
IM3 Low
IM3 Up
-35
-40
-45
-50
-55
-60
36
1990
1960
1930
s uuu
38 40 42 44 46 48 50 52
Average Output Power (dBm)
Two-carrier WCDMA 3GPP Drive-up
V_DD = 30 V, I_DQ = 2.6 A, ƒ = 1990 MHz,
3GPP WCDMA signal, PAR = 8 dB,
10 MHz carrier spacing, BW = 3.84 MHz
20
40
35
19 _Gain
30
25
18
20
Efficiency ₁₅
17
10
5
16
0
36 38 40 42 44 46 48 50 52
Average Output Power (dBm)
Data Sheet – DRAFT ONLY
3 of 13 two
Rev. 04, 2011-02-07