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| PTFB193404F Datasheet, PDF (12/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz | |||
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Confidential, Limited Internal Distribution
Pinout Diagram
Package H-37275-6/2
V1
D1
V2
D2
S=
1
G2
-37275-6-2_pd_07-22-2010
PTFB193404F
Pin
Description
V1
VDD device 1
V2
VDD device 2
D1
Drain device 1
D2
Drain device 2
G1
Gate device 1
G2
Gate device 2
S
Source (ï¬ange)
See next page for package outline speciï¬cations
Data Sheet â DRAFT ONLY
12 of 13 one
Rev. 04, 2011-02-07
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