PTFB193404F Datasheet, PDF (13/14 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 340 W, 30 V, 1930-1990 MHz

PTFB193404F
Confidential, Limited Internal Distribution
Package Outline Specifications
2X 45° X 1.19
[45° X .047]
2X 30°
V1
D1
Package H-37275-6/2
13.716
[.540]
CL
31.750
[1.250]
2X 2.032
[.080]
REF
D2
9.398
[.370]
4X
R0.508
+.381
-.127
[ ] ^R.020
+.015
-.005
2.134
[.084] SPH
1.626
[0.064]
G1
CL
31.242±0.280
[1.230±.011]
CL
G2
CL
4X 11.684
[.460]
2X 3.175
[.125]
2X 1.143
[.045]
V2
3.226±0.508
[.127±.020]
CL _9.144
[.360]
10.160
[.400]
16.612±.500
[.654±.020]
4.585+-00.1.22570
[ ] ^.180
+.010
-.005
h- 37275- 62- _po _072- 1- 2010
32.258
[1.270]
S
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 - drain, devices 1 & 2; G1, G2 - gate, devices 1 & 2;
V1, V2 - V_DD, devices 1 & 2; S - source (flange).
5. Lead thickness: 0.127 ±0.051 [.005 ±.002].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet – DRAFT ONLY
13 of 13 two
Rev. 04, 2011-02-07