PTFA211801E_11 Datasheet, PDF (8/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

PTFA211801E
Confidential, Limited Internal Distribution
Package Outline Specifications
Package H-36260-2
4X R1.52
[R.060]
45° X 2.031
45° X [.080]
CL
2X R1.63
[R.064]
2X 12.70
[.500]
CL
D
G
H -36260 - 2_ po _02 -18 - 2010
27.94
[1.100]
4.83±0.50
[.190±.020]
S
LID 13.21^{+–00..1150}
[.520^{+–..0000}
4
6
]
23.37±0.51
[.920±.020]
13.72
[.540]
1.02
[.040]
LID 22.35±0.23
[.880±.009]
CL
34.04
[1.340]
4.11±0.38
[.162±.015]
SPH 1.57
[.062]
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch]
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
8 of 9
Rev. 06, 2011-01-11