PTFA211801E_11 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
PTFA211801E
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67%
clipping, PAR = 8.5 dB, 3.84 MHz BW
Voltage Sweep
I_DQ = 1.2 A, ƒ = 2140 MHz, P_OUT = 51 dBm PEP,
tone spacing = 1 MHz
-30
35
Efficiency
30
-35
Gain
25
ACPR Low
20
-40
15
-10
-15
-20
IM3 Up
-25
-30
45
40
Efficiency
35
30
25
0.40
-45
-50
34
10
-35
20
ACPR Up
5
-40
Gain
15
36
38
40
42
44
46
0
ga₄₈211801ef
Apr^-.⁴⁵5,₂₃20₂0₄ 5₂₅3:₂1₆6:₂5₇9 ₂P₈ M₂₉
30
31
32
10
33
Average Output Power (dBm)
Supply Voltage (V)
a211801ef
Broadband Circuit Impedance
Nornalized to 50 Ohms
Z Source
D
Z Load
Z₀ = 50 Ω
Frequency
MHz
2070
2110
2140
2170
2210
G
S
Z Source W
R
jX
7.2
–0.5
7.8
–0.2
8.4
–0.0
9.1
0.0
10.0
–0.2
Z Load W
R
jX
1.5
2.3
1.4
2.6
1.4
2.8
1.4
3.0
1.3
3.4
Z Load
2210 MHz
2070 MHz
Z Source
2070 MHz
2210 MHz
0.1
0. ²
Data Sheet
5 of 9
0.3 Rev. 06, 2011-01-11
0.4