PTFA211801E_11 Datasheet, PDF (4/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 1.2 A, ƒ = 2170 MHz
17
T_CASE = 25° C
T_CASE = 90° C
16
Gain
15
60
Efficiency
47
34
14
21
13
8
0 20 40 60 80 100 120 140 160 180
Output Power (W)
PTFA211801E
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1.2 A, ƒ = 2170 MHz
18
17
Gain
16
60
Efficiency
50
40
15
30
14
20
13
10
12
0
0
20 40 60 80 100 120 140 160 180
Output Power (W)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V I_DQ = 1.2 A, ƒ = 2140 MHz,
P_OUT = 51 dBm PEP
-20
-25
3rd Order
-30
-35
-40
5th
-45
-50
7th
-55
0
5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 1.2 A,
ƒ = 2140 MHz, tone spacing = 1 MHz
-20
-25
-30
-35
-40
-45
-50
-55
-60
-65
38
45
Efficiency
40
35
IM3
IM5
30
25
20
15
10
IM7
5
0
42
46
50
54
Output Power, PEP (dBm)
Data Sheet
4 of 9
Rev. 06, 2011-01-11