PTFA211801E_11 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

PTFA211801E
Confidential, Limited Internal Distribution
Ordering Information
Type and Version
PTFA211801E V5
PTFA211801E V5 R250
Package Outline
H-36260-2
H-36260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Thermally-enhanced slotted flange, single-ended
Shipping
Tray
Tape & Reel
Typical Performance (data taken in a production test fixture)
Two-carrier WCDMA at Various Biases
V_DD = 28 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
PAR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
1.3 A
1.4 A
-40
-45
1.2 A
-50
1.1 A
-55
34 36 38 40 42 44 46 48
Output Power, Avg. (dBm)
Broadband Performance
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 45.0 dBm CW
30
-5
Efficiency
25
-10
Return Loss
20
-15
15
Gain
-20
10
-25
5
-30
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Data Sheet
3 of 9
Rev. 06, 2011-01-11