PTFA211801E_11 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 180 W, 2110-2170 MHz

PTFA211801E
Confidential, Limited Internal Distribution
RF Characteristics (cont.)
CW Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 150 W average, ƒ = 2170 MHz
Characteristic
Gain Compression
Symbol Min Typ
G_comp
—
0.5
Max
1.0
Unit
dB
Two-tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 1.2 A, P_OUT = 140 W PEP, ƒ = 2140 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min Typ
Max
Unit
Gain
G_ps
—
15.5
—
dB
Drain Efficiency
hD
—
38.5
—
%
Intermodulation Distortion
IMD
—
–28
—
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.2 A
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Min
65
—
—
—
2.0
—
Typ
—
—
—
0.05
2.5
—
Max
—
1.0
10.0
—
3.0
1.0
Unit
V
µA
µA
W
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (T_CASE = 70°C, 150 W CW)
Symbol Value
V_DSS
65
V_GS –0.5 to +12
T_J
200
T_STG –40 to +150
R_qJC
0.31
Unit
V
V
°C
°C
°C/W
Data Sheet
2 of 9
Rev. 06, 2011-01-11