PTFA210701E Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz

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Package Outline Specifications
Package H-36265-2
(45° X 2.03
[.080])
15.34±0.51
[.604±.020]
2.59±0.51
[.102±.020]
FLANGE 9.78
[.385]
2X 7.11
[.280]
CL
D
PTFA210701E
PTFA210701F
S
LID 10.16±0.25
CL ^{[.400±.010]}
2X R1.60
[R.063]
G
2x 7.11
[.280]
15.23
[.600]
10.16±0.25
[.400±.010]
4X R1.52
[R.060]
SPH 1.57
[.062]
0.0381 [.0015] -A-
2 0 0 7 -1 1 -1 6 _ h -3 6 + 3 7 2 6 5 _ P O s .v s d _ h -3 6 2 6 5 2-
1.02
[.040]
20.31
[.800]
Diagram Notes—unless otherwise specified:
1. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
2. All tolerances ± 0.127 [.005] unless specified otherwise.
3. Pins: D = drain, S = source, G = gate.
4. Interpret dimensions and tolerances per ASME Y14.5M-1994.
5. Primary dimensions are mm. Alternate dimensions are inches.
6. Gold plating thickness:
S, D, G - flange & leads: 1.14 ± 0.38 micron [45 ± 15 microinch]
3.56±0.38
[.140±.015
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Data Sheet
8 of 10
Rev. 02.1, 2009-02-18