PTFA210701E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
70 W, 2110 – 2170 MHz
PTFA210701E
PTFA210701F
Description
The PTFA210701E and PTFA210701F are 70-watt LDMOS FETs
designed for single- and dual-carrier WCDMA power amplifier
applications in the 2110 MHz to 2170 MHz band. Features include
input and output matching, and thermally-enhanced packages with
slotted or earless flanges. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA210701E
Package H-36265-2
PTFA210701F
Package H-37265-2
Two-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 550 mA, ƒ = 2140 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 10 MHz carrier spacing
-30
35
-35
Efficiency
-40
IM3
-45
-50
30
25
20
ACPR
15
-55
10
-60
5
30 32 34 36 38 40 42 44
Average Output Power (dBm)
Features
• Thermally-enhanced packages, Pb-free and
RoHS-compliant
• Broadband internal matching
• Typical two-carrier WCDMA performance at
2140 MHz, 30 V
- Average output power = 42 dBm
- Linear Gain = 16.5 dB
- Efficiency = 27.0%
- Intermodulation distortion = –37 dBc
- Adjacent channel power = –42.5 dBc
• Typical CW performance, 2170 MHz, 30 V
- Output power at P–1dB = 80 W
- Efficiency = 58%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
70 W (CW) output power
RF Characteristics
WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 550 mA, P_OUT = 18 W average
ƒ₁ = 2135 MHz, ƒ₂ = 2145 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 8 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
η_D
IMD
15.5 16.5
—
dB
28
29
—
%
—
–36.5 –35.5
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02.1, 2009-02-18