PTFA210701E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Single-carrier WCDMA Drive-up
V_DD = 30 V, I_DQ = 550 m A, ƒ = 2140 MHz,
3GPP WCDMA signal, TM1 w/16 DPCH, 67% clipping,
P/A R = 8.5 dB, 3.84 MHz BW
-30 ACPR Up
50
ACPR Low
-35
40
Efficiency
-40
30
-45
20
-50
-55
30
ACPR
32 34 36 38 40 42
Average Output Power (dBm)
10
0
44
PTFA210701E
PTFA210701F
Voltage Sweep
I_DQ = 550 mA, ƒ = 2140 MHz,
tone spacing = 1 MHz, P_OUT (PEP) = 48.5 dBm
-5
50
-10
45
-15
40
-20
Efficiency ₃₅
-25 IM3 Up
30
-30
25
-35
20
-40
Gain ¹⁵
-45
10
23
25
27
29
31
33
Supply Voltage (V)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V, I_DQ = 550 mA, ƒ = 2140 MHz,
P_OUT = 48.5 dBm PEP
-20
-25
3rd order
-30
-35
-40
5th
-45
7th
-50
-55
0
5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.15 A
0.44 A
0.73 A
1.10 A
2.20 A
3.30 A
4.41 A
5.51 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 02.1, 2009-02-18