PTFA210701E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz

Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
PTFA210701E
PTFA210701F
Broadband Performance
V_DD = 30 V, I_DQ = 550 mA, P_OUT = 42.5 dBm
35
10
5
30 _Efficiency
0
-5
25
-10
20
Return Loss ^-15
-20
15 _Gain
-25
-30
10
-35
2070 2090 2110 2130 2150 2170 2190 2210
Frequency (MHz)
Two-tone Drive-up at Optimum I_DQ
V_DD = 30 V, I_DQ = 550 mA,
ƒ = 2140 MHz, tone spacing = 1 MHz
-25
45
-30
40
-35
Efficiency
35
-40
IM3
30
-45
25
IM5
-50
20
-55
IM7
15
-60
10
-65
5
35 37 39 41 43 45 47 49
Output Power, PEP (dBm)
Two-carrier WCDMA at Selected Biases
V_DD = 30 V, ƒ = 2140 MHz, 3GPP WCDMA signal,
P/AR = 8 dB, 10 MHz carrier spacing, series show I_DQ
-30
-35
450 mA
650 mA
-40
-45
-50
600 mA
-55
550 mA
500 mA
-60
30 32 34 36 38 40 42 44
Average Output Power (dBm)
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 550 mA, ƒ = 2170 MHz
18 ^{TCASE = 25°C}
60
T_CASE = 90°C
17
50
16 Gain
40
15
30
14
13
0
Efficiency
20
40
60
80
Output Power (W)
20
10
100
Data Sheet
3 of 10
Rev. 02.1, 2009-02-18