PTFA210701E Datasheet, PDF (6/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 70 W, 2110 – 2170 MHz

PTFA210701E
PTFA210701F
Confidential, Limited Internal Distribution
Reference Circuit
C1
0.001µF
R2
1.3K V
R1
1.2KV
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
2K V
R4
2K V
RF_IN
R5
10 V
+ C4
10µF
35V
R6
1K V
C5 R7
C6
0.1µF 1K V 1µF
C10
10pF
l1
l2
l3
l4
C9
0.8pF
C11
1.3pF
R8
L1
5.1K V
C7
C8
0.01µF 10pF _l8
C12 C13
C14
10pF 0.02µF 1µF
C15
100µF
50V
R9
10 V
l9
DUT
l5
l6
l7
l11 l12
C22
0.5pF
l13 l14
C25
10pF
l15
l16
C23
C24
l10
0.5pF
0.8pF
L2
VDD
C16
0.1µF
RF_OUT
C17 C18
C19
10pF 0.02µF
1µF
C20
100µF
50V
C0.211µF
Reference circuit schematic for ƒ = 2140 MHz
Circuit Assembly Information
DUT
PCB
PTFA210701E or PTFA210701F
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Microstrip Electrical Characteristics at 2140 MHz¹
l1
0.112 λ, 50.0 Ω
l2
0.053 λ, 50.0 Ω
l3
0.044 λ, 43.0 Ω
l4
0.054 λ, 43.0 Ω
l5
0.016 λ, 43.0 Ω
l6
0.022 λ, 14.6 Ω
l7
0.062 λ, 12.2 Ω
l8
0.214λ, 61.0 Ω
l9, l10
0.211 λ, 53.0 Ω
l11
0.042 λ, 6.5 Ω
l12 (taper)
0.043 λ, 6.5 Ω / 16.2 Ω
l13 (taper)
0.023 λ, 16.2 Ω / 50.0 Ω
l14
0.010 λ, 53.0 Ω
l15
0.130 λ, 53.0 Ω
l16
0.116 λ, 53.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
9.53 x 1.78
4.52 x 1.78
3.73 x 2.18
4.57 x 2.18
1.37 x 2.18
1.73 x 8.76
4.88 x 10.82
18.36 x 1.22
17.91 x 1.57
3.25 x 21.84
3.30 x 21.84 / 7.80
1.88 x 7.80 / 1.57
0.89 x 1.57
11.07 x 1.57
9.88 x 1.57
Dimensions: L x W (in.)
0.375 x 0.070
0.178 x 0.070
0.147 x 0.086
0.180 x 0.086
0.054 x 0.086
0.068 x 0.345
0.192 x 0.426
0.723 x 0.048
0.705 x 0.062
0.128 x 0.860
0.130 x 0.860 / 0.307
0.074x 0.307 / 0.062
0.035 x 0.062
0.436 x 0.062
0.389 x 0.062
Data Sheet
6 of 10
Rev. 02.1, 2009-02-18