PTFA092211EL Datasheet, PDF (8/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz

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Package Outline Specifications
Package H-33288-2
PTFA092211EL
PTFA092211FL
C66065-A0003-C723-01-0027 H-33288-2.dwg
Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D = drain, S = source, G = gate.
5. Lead thickness: 0.10 +0.051/–0.025 [.004 +.002/–.001].
6. Gold plating less than 0.25 micron [10 microinch].
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Data Sheet
8 of 10
Rev. 02, 2009-05-27