PTFA092211EL Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
V_DD = 30 V, I_DQ = 1.75 A, ƒ₁ = 939 MHz, ƒ₂ = 940 MHz
-20
-30
-40 ^{3rd Order}
-50
5th
-60
-70
7th
-80
40
44
48
52
56
Output Power, PEP (dBm)
PTFA092211EL
PTFA092211FL
Six-carrier GSM Performance
V_DD = 30 V, I_DQ = 1.6 A, ƒ = 940 MHz,
P/AR = 7 dB
60
-20
IMD Low
50
IMD Up
-25
40
-30
Efficiency
30
-35
20
-40
10
Gain
-45
0
-50
37 39 41 43 45 47 49
Output Power (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
2.33 A
4.65 A
1.02
9.33 A
1.01
11.64 A
1.00
13.98 A
0.99
0.98
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
4 of 10
Rev. 02, 2009-05-27