PTFA092211EL Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz

Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1750 mA, P_OUT = 220 W PEP, ƒ = 940 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min
G_ps
—
η_D
—
IMD
—
PTFA092211EL
PTFA092211FL
Typ
Max
Unit
18.0
—
dB
44
—
%
–29
—
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 mA
V_DS = 28 V, V_GS = 0 V
V_DS = 63 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 30 V, I_DQ = 1750 mA
V_GS = 10 V, V_DS = 0 V
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25 °C derate by
Storage Temperature Range
Thermal Resistance (T_CASE = 70 °C, 220 W CW)
Ordering Information
Symbol
V_(BR)DSS
I_DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Symbol
V_DSS
V_GS
T_J
P_D
T_STG
R_θJC
Min Typ
65
—
—
—
—
—
—
0.04
2.0
2.5
—
—
Max
—
1.0
10.0
—
3.0
1.0
Value
65
–0.5 to +12
200
700
4.0
–40 to +150
0.25
Unit
V
µA
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
PTFA092211EL V4
Package Type
H-33288-2
PTFA092211FL V4 H-34288-2
Package Description
Thermally-enhanced slotted flange,
single-ended
Thermally-enhanced earless flange,
single-ended
Shipping
Tray
Tray
Marking
PTFA092211EL
PTFA092211FL
Data Sheet
2 of 10
Rev. 02, 2009-05-27