PTFA092211EL Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
220 W, 920 – 960 MHz
Description
The PTFA092211EL and PTFA092211FL are 220-watt, internally-
matched LDMOS FETs intended for EDGE and WCDMA applications
in the 920 to 960 MHz band. Manufactured with Infineon's advanced
LDMOS process, these devices provide excellent thermal
performance and superior reliability.
PTFA092211EL
Package H-33288-2
PTFA092211FL
Package H-34288-2
PTFA092211EL
PTFA092211FL
Two-carrier WCDMA Performance
V_DD = 30 V, I_DQ = 1.50 A, ƒ = 940 MHz, 3GPP WCDMA
signal, PAR = 6.5 dB, 5 MHz carrier spacing
40
-20
35
-25
30
-30
25
Efficiency
-35
20
-40
15
ACP
-45
10
-50
40 41 42 43 44 45 46 47 48 49
Output Power, Avg. (dBm)
RF Characteristics
Features
• Broadband internal matching
• Typical two-carrier WCDMA performance at
940 MHz, 30 V
- Average output power = 50 W
- Linear Gain = 18.0 dB
- Efficiency = 30%
- Intermodulation distortion = –37 dBc
• Typical CW performance, 940 MHz, 30 V
- Output power at P–1dB = 250 W
- Gain = 17.0 dB
- Efficiency = 59%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 30 V,
220 W (CW) output power
• Pb-free, RoHS-compliant and thermally-enhanced
packages
Two-carrier WCDMA Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1750 mA, P_OUT = 50 W (AVG),
ƒ₁ = 937.5 MHz, ƒ₂ = 942.5 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average = 7.5 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
17.0 18.0
η_D
28.5
30
IMD
—
–34
Max
—
—
–32
Unit
dB
%
dBc
All published data at T_CASE = 25 °C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 02, 2009-05-27